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On the quasi-steady-state assumption in modeling Czochralski crystal growth

✍ Scribed by J.J. Derby; R.A. Brown


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
758 KB
Volume
87
Category
Article
ISSN
0022-0248

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A discrete model of substitutional-inter
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A discrete model is developed to describe the diffusion of dopanthmpurity in a single semiconductor crystal during Czochralski growth. The basic diffusion mechanism is assumed to be substitutional-interstitial interchange for the impurity, together with self-diffusion of the host atoms. In particula