On the pressure effect on Tc of hole-doped and electron-doped high-Tc superconductors

✍ Scribed by V.F. Elesin; V.A. Kashurnikov; L.A. Openov; A.I. Podlivaev

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 557 KB
• Volume: 195
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(92)90087-s

✦ Synopsis

The binding energies of excess carriers (holes or electrons) as functions of the in-plane copper-oxygen hopping matrix element are calculated numerically by an exact diagonalization of the Emery Hamiltonian for the two-dimensional Cu408 cluster. Based on the results of the calculations, a qualitative explanation is given for experimental findings concerning the pressure dependence of T, in hole-doped and electron-doped high-T, superconductors.

The possibility of positive dT,/dP in electron-doped high-T, superconductors is predicted.