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On the out-diffusion of oxygen from silicon

✍ Scribed by Gaworzewski, P. ;Ritter, G.

Book ID
105375673
Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
410 KB
Volume
67
Category
Article
ISSN
0031-8965

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## Abstract A measurement of nitrogen out‐diffusion from nitrogen‐doped float‐zone silicon made using a dislocation locking technique is presented. Specimens containing a well‐defined array of dislocation half‐loops are subjected to identical anneals at 750 Β°C, during which nitrogen diffuses both t