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On the oscillator strength in dilute nitride quantum wells on GaAs

✍ Scribed by Ryczko, K.; Sęk, G.; Misiewicz, J.; Langer, F.; Höfling, S.; Kamp, M.


Book ID
120338730
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
563 KB
Volume
111
Category
Article
ISSN
0021-8979

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## Abstract The effect of dilute N alloying and Bi surfactant growth on strain relaxation in highly strained InGaAs single quantum well (QWs) was investigated by using high resolution X‐ray diffraction (HRXRD) and transmission electron microscopy (TEM). Dilute nitride In~__x__~Ga~1–__x__~As~0.99~N~