𝔖 Bobbio Scriptorium
✦   LIBER   ✦

On the origin of the photo-emf at the gallium-arsenide/electrolyte interface

✍ Scribed by Yu.V. Pleskov; V.V. Eletsky

Publisher
Elsevier Science
Year
1967
Tongue
English
Weight
659 KB
Volume
12
Category
Article
ISSN
0013-4686

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

On the origin of the shunt effect in pol
On the origin of the shunt effect in polycrystalline gallium arsenide pn-junction devices
✍ Markus BΓΆhm; Allen M. Barnett πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science βš– 709 KB

pn-Junction diodes have been fabricated on polycrystalline wafers by liquid phase epitaxy (LPE). The influence of grain boundaries on the currentvoltage characteristics of the diodes has been investigated. It has been found that only a few grain boundaries shunt the junction. Grain boundary test dev

On the zero-charge potential of gallium
On the zero-charge potential of gallium in aqueous solutions and the origin of high capacitance at the gallium/solution interface
✍ I.A. Bagotskaya; A.M. Morozov; N.B. Grigoryev πŸ“‚ Article πŸ“… 1968 πŸ› Elsevier Science 🌐 English βš– 441 KB

The zero-charge potentials of gallium in water as determined from the position of the minimum on the differential capacitance in dilute solutions and from the electrocapillary curves in the absence of anion adsorption are shown to coincide and to be -@97 to -0.98 V (nce). Evidence is presented supp