On the nature of deep donors created at 450 °C in boron-doped p-Si

✍ Scribed by Babich, V. M. ;Baran, N. P. ;Valakh, M. Ya. ;Kiritsa, V. L. ;Rudko, G. Yu.

• Book ID: 105385168
• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 397 KB
• Volume: 157
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211570224