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On the mechanism of annealing effect in electrical resistivity of sub-100 nm Ag (1% W) films

โœ Scribed by E. Glickman; A. Inberg; V. Bogush; G. Aviram; N. Croitoru; Y. Shacham-Diamand


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
473 KB
Volume
76
Category
Article
ISSN
0167-9317

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Effect of pressure, ageing and in situ a
โœ P.V. Ashrit; M.A. Angadi ๐Ÿ“‚ Article ๐Ÿ“… 1982 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 225 KB

We report on the effect of pressure, ageing and in situ annealing on the electrical resistivity and temperature coefficient of resistance in thin samarium films over the thickness range lOiN A. On annealing at 180ยฐC for 2 h. film resistivity increases for lower thicknesses but remains constant for h