## Abstract Initial stages of SiC crystal growth by Physical Vapor Transport method were investigated. The following features were observed: (a) many nucleation crystallization centres appeared on the seed surface during the initial stage of the growth, (b) at the same places many separate flat fac
On the initial stages of skeletal crystal growth
โ Scribed by Dr. Chr. N. Nanev
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 571 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0232-1300
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