On the inclusion of the recombination term in discretizations of the semiconductor device equations
β Scribed by John J.H. Miller
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 521 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0378-4754
No coin nor oath required. For personal study only.
β¦ Synopsis
In this paper we consider the semiconductor device equations for stationary problems where the recomhination term cannot be neglected. We illustrate our ideas by deriving systematically diacretizationa of the two continuity equations and of the Poisson equation in the case of one space dimension. This approach leads to finite difference schemes for the continuity equations which are related to the Scharfetter-(iummel scheme. For the Poisson equation we obtain a new finite difference scheme which reduces to a scheme of Mock if the mesh is uniform and the recombination is zero.
π SIMILAR VOLUMES
We describe the implementation of numerical models of shallow water flow on the surface of the sphere, models which include the nondivergent barotropic limit as a special case. All of these models are specified in terms of a new grid-point-based methodology which employs an heirarchy of tesselations
We show that for the P N -P N -2 spectral element method, in which velocity and pressure are approximated by polynomials of order N and N -2, respectively, numerical instabilities can occur in the spatially discretized Navier-Stokes equations. Both a staggered and nonstaggered arrangement of the N -