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On the highly selective ZnO:Al2O3 based thick film hydrogen sensors

✍ Scribed by N. JAYADEV DAYAN; S. R. SAINKAR; A. A. BELKEHAR; R. N. KAREKAR; R. C. AIYER

Book ID
110371886
Publisher
Springer
Year
1997
Tongue
English
Weight
920 KB
Volume
16
Category
Article
ISSN
0261-8028

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H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals