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On the formation of etch pits at dislocations

โœ Scribed by D.A. Vermilyea


Publisher
Elsevier Science
Year
1958
Weight
246 KB
Volume
6
Category
Article
ISSN
0001-6160

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โœฆ Synopsis


LETTERS

TO THE EDITOR 381

the kinetic law of preprecipitation, the influence of interaction energy between vacancies and solute atoms and so on) and while all details of the process are not completely understood, substantial contributions of other mechanisms cannot be discarded; for instance the hypothesis may be suggested that in some case vacancies could transport solute atoms to dislocations, which could then act as channels for easy diffusion;

this co-operation between vacancies and dislocations could relieve the necessity for gliding of dislocations.

the rate of clustering in Al-Cu alloys at low temperatures. t * Private communication. t W. DE SORBO, H. N. TREAFTIS and D. TURNBULL Acta Met. in press (1958).


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Eccentricity of symmetrical and asymmetr
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## Abstract There are two types of chemical eccentric etch pits. Deepest points are always lying on the shorter diagonal. โ€“ Symmetrical etch pits the deepest points of which lying on the diagonals show dislocation lines in the plane (110). Eccentricity of symmetrical etch pits along the [110] dire

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## Abstract Causes of the formation of dislocation etch pits of different shape and size on {100} faces of cesium iodide crystals by an etchant composed from 25โ€“35 mg/1 CuCl~2~ ยท 2 H~2~O in 96% ethanol are studied. It is shown that one of the reasons of the change in the morphology of etch pits is