On the Exciton Binding to Neutral Impurities in Semiconductors

✍ Scribed by G. Munschy

• Book ID: 104543644
• Publisher: John Wiley and Sons
• Year: 1972
• Tongue: English
• Weight: 428 KB
• Volume: 53
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220530141

✦ Synopsis

Abstract

It is shown that the complex consisting of an exciton bound to a neutral donor (or acceptor) is not always stable. There is an intermediate range of values of the electron to hole effective‐mass ratio σ for which the complex becomes unstable against the dissociation into an exciton and a neutral donor (or acceptor). Furthermore, in the so delimited H~2~‐like region of stability of the complex, the binding energy expressed in atomic units is shown to vary monotonically with the mass ratio σ up to a critical value àc (1 < σc < 2) which corresponds to the dissociation limit.