On the effects of Ga3+ and La3+ ions in MgCu ferrite: Humidity-sensitive electrical conduction

✍ Scribed by N. Rezlescu; E. Rezlescu; C.-L. Sava; F. Tudorache; P. D. Popa

• Publisher: John Wiley and Sons
• Year: 2004
• Tongue: English
• Weight: 251 KB
• Volume: 39
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200310223

✦ Synopsis

Pure and gallium or lanthanum substituted MgCu ferrites, Mg 0.5 Cu 0.5 Fe 2-x M x O 4 (with x = 0 or 0.2 and M = La or Ga) have been prepared by solid state reaction. Sintering experiments were carried out at different temperatures between 900 and 1100°C. The phase composition and lattice parameters were determined by XRD, while the effect of Ga and La substitutions on the granular structure was studied by SEM. Experimental results revealed that the densification behaviour and some physical properties are in close relation with the structural changes of pure ferrite caused by the presence of La and Ga substitutions. The gallium containing compound, Mg 0.5 Cu 0.5 Fe 1.8 Ga 0.2 O 4 , is monophasic and contains a great number of pores, whereas the lanthanum containing compound, Mg 0.5 Cu 0.5 Fe 1.8 La 0.2 O 4 , is biphasic and exhibits a high density. The humidity characteristics show that the gallium ion enhances the humidity sensitivity of the MgCu ferrite sintered at 1000°C. This interesting effect is promising for the future of the Ga-substituted MgCu ferrite to be used as sensitive material for fabrication of ceramic humidity sensors.