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On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H films

โœ Scribed by E.C. Paloura; Y. Kuo; W. Braun


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
155 KB
Volume
208-209
Category
Article
ISSN
0921-4526

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In this article, by investigating the influence of Ar flow rate on deposition rate and structural properties of hydrogenated silicon germanium (SiGe:H) films, we showed that the addition of Ar in the diluted gas efficiently improve the deposition rate and crystallinity due to an enhanced dissociatio