โ Scribed by I. V. Gektina
No coin nor oath required. For personal study only.
The effect of shear stress and temperature on the delay time, ti, of thermally activated motion of dislocations in the (11$!2) <1123) slip system in 2 1 1 single crystals is studied. The delay is associated with a higher density of crystal defects at the initial path of dislocation motion. ~CCJIejlOBaHO BJIHRHHe HanpRImeHHf3 CjlBMra H TeMIIepaTypbI Ha BpeMFI 3anepmK;kI ti T e p ~1 O a I ~T ; k I B ~p O B a H H O ~O HBMXeHHR JWCJIOHaUklH { 1122) ( 1123) B Zn. BO3HHKHOBeHkle 3ajlepWKkl CBf33LIBaeTCR C IIOBbIIIIeHHOt IIJIOTHOCTbH) He@eHTO& Ha Ha' laJILHOhI JWICTIie jlBMmeHMfI JWCJIOKaUHfi.
๐ SIMILAR VOLUMES
7%~ mobilities of thermal electrons in tr-nlkanc vapors decrease with increasing static polarizability and the mcasurad scattering cross sections compxc we11 with the geometric cross sections. Evidence is provided for tile cxistcnce of ;I Ramsarer-Townsend minimum in Cz116 and C3118. 1. htmduction '