✦ LIBER ✦
On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon
✍ Scribed by Shibib, M.A.; Lindholm, F.A.
- Book ID
- 114593462
- Publisher
- IEEE
- Year
- 1980
- Tongue
- English
- Weight
- 435 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0018-9383
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