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On the compensation mechanism in high-resistivity 6H–SiC doped with vanadium

✍ Scribed by Jenny, J. R.; Skowronski, M.; Mitchel, W. C.; Hobgood, H. M.; Glass, R. C.; Augustine, G.; Hopkins, R. H.


Book ID
120609330
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
713 KB
Volume
78
Category
Article
ISSN
0021-8979

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