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On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

✍ Scribed by Fischer, R.; Drummond, T.J.; Klem, J.; Kopp, W.; Henderson, T.S.; Perrachione, D.; Morkoc, H.


Book ID
114594816
Publisher
IEEE
Year
1984
Tongue
English
Weight
588 KB
Volume
31
Category
Article
ISSN
0018-9383

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