On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

✍ Scribed by Kroemer, Herbert; Polasko, Kenneth J.; Wright, Steve C.

• Book ID: 121200551
• Publisher: American Institute of Physics
• Year: 1980
• Tongue: English
• Weight: 582 KB
• Volume: 36
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.91643