On some factors limiting depth resolution during SIMS profiling
โ Scribed by P.C. Zalm; C.J. Vriezema
- Book ID
- 113283181
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 428 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The influence of Ar pressure on depth resolution during glow discharge optical emission spectroscopy (GDOES) depth profiling has been examined through the use of 358 nm thick anodic alumina films grown over flat aluminium surfaces. The films are ideal standards for the present purpose, being amorpho
Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square
In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions and analyzing with 25 keV Ga + ions. The Cs/Xe technique consists in diluting the cesium sputtering/etching beam with xenon ions to control