✦ LIBER ✦

On-resistance, thermal resistance and reverse recovery time of power MOSFETs at 77 K

✍ Scribed by O. Mueller

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 697 KB
Volume: 29
Category: Article
ISSN: 0011-2275
DOI: 10.1016/0011-2275(89)90250-6

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✦ Synopsis

Measurements of the on-resistance, the approximate thermal resistance and the drain-source diode reverse recovery time of new commercially available power MOS field-effect transistors at room and at liquid nitrogen temperature (77 K) are presented and compared. It is demonstrated that all three parameters drastically improve in cooled devices, especially in those with high breakdown voltage.

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