The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud
β¦ LIBER β¦
On Quadruple-Defect Formation in C15 Laves Phases
β Scribed by I. W. Modder; H. Bakker
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 339 KB
- Volume
- 199
- Category
- Article
- ISSN
- 0370-1972
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