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Obtaining p-n junctions and nonrectifying contacts on gallium arsenide by the method of auto- and heteroepitaxy: V P Duraev et al, Sb Nauch Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh 1969, 224–230 (in Russian)


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
155 KB
Volume
21
Category
Article
ISSN
0042-207X

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