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Observations of facet formation during MOMBE of GaAs on a patterned substrate

โœ Scribed by Y. Morishita; Y. Nomura; S. Goto; Y. Katayama; T. Isu


Book ID
118365461
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
512 KB
Volume
267
Category
Article
ISSN
0039-6028

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We investigated the pattern formation mechanism of a periodically faceted crystal-melt interface during the crystallization of Si by in situ observation. It was directly proved that spacing between the reentrants of adjacent zigzag facets increases with the unification of adjacent facets when a face