Observation of transport in mesoscopic honeycomb-shaped networks

✍ Scribed by V.A. Samuilov; I.B. Butylina; V.K. Ksenevich; G. Kiss; G. Remenyi; B. Podor

• Book ID: 102618923
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 198 KB
• Volume: 25
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0637

✦ Synopsis

An electronic transport was observed in honeycomb-shaped mesoscopic (submicron) networks at liquid helium temperature. These networks were manufactured by the reactive ion etching of highly (nearly degenerated) and moderately doped n-GaAs epilayers through the initially structured, by self-organised patterning, polymer masks. The free electron transport was observed in the networks of thin, highly doped, n-GaAs epilayer. The detected multiple switching on the I -V characteristics was explained in the framework of the model of a dynamic random resistor network. The existence of the patterned part of the thick, moderately doped, n-GaAs epilayer was the reason for the increase of the compensation ratio, the ionization energy and, as a result, the threshold voltage of the impact ionization of the shallow donor impurity level in the bulk of the epilayer.