Observation of the XeS charge transfer emission in crystal Xe doped with OCS

✍ Scribed by Satoshi Tanaka; Hideo Kajihara; Seiichiro Koda; V.A. Apkarian

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 274 KB
• Volume: 233
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(94)01495-h

✦ Synopsis

In free standing crystals of Xe, OCS readily dissociates upon irradiation at 248 nm. On continuation of the laser irradiation, a broad emission centered at 346 nm was found to grow, which is assigned to the Xe-S charge transfer exciplex transition in the crystal. The temperature-induced mobility of S atoms is documented: upon warm-up, the intensity of the exciplex emission decreases with concomitant increase of the S2(B ~ X) emission band intensity.