## Abstract The ferromagnetic coupling (FMC) among magnetic impurities in the dilute magnetic semiconductors (DMSs) ZnO and GaN is revisited within a molecular orbital (MO) approximation. In particular, based on computational results obtained by both __ab initio__ and tight binding molecular dynami
โฆ LIBER โฆ
Observation of Strong-Coupling Effects in a Diluted Magnetic Semiconductor
โ Scribed by Pacuski, W.; Kossacki, P.; Ferrand, D.; Golnik, A.; Cibert, J.; Wegscheider, M.; Navarro-Quezada, A.; Bonanni, A.; Kiecana, M.; Sawicki, M.; Dietl, T.
- Book ID
- 120512145
- Publisher
- The American Physical Society
- Year
- 2008
- Tongue
- English
- Weight
- 322 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0031-9007
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In this work a numerical model of anti-ferromagnetic spin-pairing in diluted magnetic semiconductors is used to determine the paramagnetic behaviour of both abrupt and rough interfaces. A detailed study of the paramagnetic behaviour of the individual monolayers adjacent to an abrupt interface with a