Observation of neutral products of a soft X-ray stimulated etching reaction in the SF6/a-SiO2 absorption system
✍ Scribed by Hiromi Ikeura; Kenichiro Tanaka; Tetsuhiro Sekiguchi; Kinichi Obi
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 454 KB
- Volume
- 217
- Category
- Article
- ISSN
- 0009-2614
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✦ Synopsis
Soft X-ray stimulated etching reactions in an SFs/a-SiOs adsorption system have been studied by the direct detection of neutral products using quadrupole mass spectrometry. Various nascent products were observed by Sizp core-level excitation. The observation of SO,F,+ fragments in relatively high amounts suggests that active species contain not only F atoms but also that S atoms play an important role. The excitation energy dependence of the SiF+ intensity has shown evidence that core-level excitation is more effective on the etch rate than valence-level excitation, and that the etching is caused by surface excitation.