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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

✍ Scribed by D. Allen; J. Wittge; A. Zlotos; E. Gorostegui-Colinas; J. Garagorri; P.J. McNally; A.N. Danilewsky; M.R. Elizalde


Book ID
108224679
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
824 KB
Volume
268
Category
Article
ISSN
0168-583X

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