✦ LIBER ✦

Observation of anti-bonding excited state in charging diagram of a few-electron double dot

✍ Scribed by Tsuyoshi Hatano; Yasuhiro Tokura; Shinichi Amaha; Toshihiro Kubo; Seigo Tarucha

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 183 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.08.062

No coin nor oath required. For personal study only.

✦ Synopsis

We fabricated a unique hybrid vertical-lateral double dot device with two dots coupled in parallel to study the excitation energy spectra with the number of electrons in each dot and inter-dot level detuning as parameters. We measured the charging diagram for a finite bias voltage and observed the tunnel-coupled bonding state and anti-bonding state. The separation between the two states is a direct measure of the inter-dot tunnel coupling energy. We use this energy and other characteristic energies derived from the charging diagram to characterize the exchange interaction energy.

📜 SIMILAR VOLUMES

Direct observation of excited states in

Direct observation of excited states in double quantum dot silicon single electron transistor

✍ B.H Choi; S.H Son; K.H Cho; S.W Hwang; D Ahn; D.H Kim; J.D Lee; B.G Park 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 422 KB

We report, in this paper, the detailed measurements obtained from the double quantum dot silicon single electron transistors. Both the drain current and the differential conductance measurements in large drain voltage regime show small conductance peaks-as many as seven. The differential conductance