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Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

✍ Scribed by N. A. Poklonskii; S. A. Vyrko; A. G. Zabrodskii; S. V. Egorov


Book ID
110137086
Publisher
SP MAIK Nauka/Interperiodica
Year
2003
Tongue
English
Weight
106 KB
Volume
45
Category
Article
ISSN
1063-7834

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