The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste
β¦ LIBER β¦
Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination
β Scribed by Dentan, M.; de Cremoux, B.
- Book ID
- 119949727
- Publisher
- Optical Society of America
- Year
- 1990
- Tongue
- English
- Weight
- 611 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0733-8724
- DOI
- 10.1109/50.57833
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