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Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

✍ Scribed by Dentan, M.; de Cremoux, B.


Book ID
119949727
Publisher
Optical Society of America
Year
1990
Tongue
English
Weight
611 KB
Volume
8
Category
Article
ISSN
0733-8724

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The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste

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## Abstract This paper presents a novel fully analytical model describing the high‐frequency behavior of __p__‐__i__‐__n__ photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered b