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Numerical simulation of MOCVD-process for YBCO thin film fabrication in stagnation point reactor

✍ Scribed by Sergey E Khoruzhnikov; Andrey M Robachevsky; Alexander S Segal


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
272 KB
Volume
32
Category
Article
ISSN
0011-2275

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✦ Synopsis


Chemical deposition of hightemperature superconducting (HTSC) YBazCu=O~-x film from vapors of metalorganic (140) compounds in the stagnation zone reactor with cold walls is simulated numerically. Velocity, temperature and reagents concentration fields as well as film thickness and composition distributions on substrate are calculated. Influence of construction reactor parameters on the process efficiency and film quality is analyzed by means of numerical factor experiment.