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Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases

✍ Scribed by Goran S. Ristić; Momčilo M. Pejović; Aleksandar B. Jakšić


Book ID
104306475
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
164 KB
Volume
40
Category
Article
ISSN
0167-9317

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