Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle

✍ Scribed by Camiola, Vito Dario; Mascali, Giovanni; Romano, Vittorio

• Book ID: 118779740
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 806 KB
• Volume: 24
• Category: Article
• ISSN: 0935-1175
• DOI: 10.1007/s00161-011-0217-6