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Numerical Implementation and Application of an Extended Model for Diffusion and Precipitation of Chemical Elements in Metallic Matrices

✍ Scribed by Jean-Baptiste Brunac; Didier Huin; Jean-Baptiste Leblond


Book ID
106490253
Publisher
Springer-Verlag
Year
2010
Tongue
English
Weight
610 KB
Volume
73
Category
Article
ISSN
0030-770X

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## Abstract Technologies such as solid‐phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing str