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Numerical discretization of energy-transport model for semiconductors using high-order compact schemes

✍ Scribed by M. Fournié

Book ID
104349373
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
426 KB
Volume
15
Category
Article
ISSN
0893-9659

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✦ Synopsis

This paper deals with numerical discretization of energy-transport model for nondegenerate semiconductors with a parabolic structure. The scheme is based on high-order computations using compact stencil. Numerical simulations of a ballistic diode in 1D are performed for different energy relaxation time and are compared with the results obtained by a drift-diffusion model.

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