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Numerical and analytical calculation of collector buried layer resistance in a bipolar transistor

✍ Scribed by A.D Sadovnikov; D.J Roulston; D Celi


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
348 KB
Volume
38
Category
Article
ISSN
0038-1101

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Three-dimensional simulation for negativ
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The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. Th