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Numerical analysis of the absorption and the refractive index change in arbitrary semiconductor quantum-well structures

โœ Scribed by Nakamura, K.; Shimizu, A.; Fujii, K.; Koshiba, M.; Hayata, K.


Book ID
117866976
Publisher
IEEE
Year
1992
Tongue
English
Weight
725 KB
Volume
28
Category
Article
ISSN
0018-9197

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The change of the refractive index due to quantum well (QW) disordering is calculated for light propagating normal to the AI0.3Ga0.7As/GaAs QW layers (i.e. along the QW growth direction). A hyperbolic function is used to model the above QW confinement profile after disordering, i.e. thermal interdif