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Numerical analysis of steady-state and transient charge transport in organic semiconductor devices

✍ Scribed by Evelyne Knapp; Beat Ruhstaller

Book ID: 106489472
Publisher: Springer
Year: 2011
Tongue: English
Weight: 528 KB
Volume: 42
Category: Article
ISSN: 0306-8919
DOI: 10.1007/s11082-011-9443-1

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## Abstract For a large number of organic disordered semiconductors the transport of electrons or holes via hopping is mediated by localized states in the band gap. An attempt is presented towards testing the widely met hopping transport model based on the assumption of a Gaussian density of states