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Numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET

✍ Scribed by P.C. Yang; Sheng S. Li

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
440 KB
Volume
36
Category
Article
ISSN
0038-1101

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## Abstract The gate characteristics (__I__~__D__~–__V__~__GS__~) of fully depleted, lightly doped, enhanced SOI __n__‐MOSFET are simulated over a wide range of operating temperature (300–600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the dra