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Numerical analysis of device performance of metamorphic Iny Al1-yAs/InxGa1-xAs (0.3⩽x⩽0.6) HEMTs on GaAs substrate

✍ Scribed by Happy, H.; Bollaert, S.; Foure, H.; Cappy, A.


Book ID
114537444
Publisher
IEEE
Year
1998
Tongue
English
Weight
181 KB
Volume
45
Category
Article
ISSN
0018-9383

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