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Novel TCAD-Oriented Definition of the off-State Breakdown Voltage in Schottky-Gate FETs: A 4H–SiC MESFET Case Study

✍ Scribed by Furno, M.; Bonani, F.; Ghione, G.


Book ID
114619237
Publisher
IEEE
Year
2008
Tongue
English
Weight
906 KB
Volume
55
Category
Article
ISSN
0018-9383

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