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Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

✍ Scribed by Kwang-Jow Gan; Cher-Shiung Tsai; Dong-Shong Liang


Publisher
Springer
Year
2008
Tongue
English
Weight
483 KB
Volume
59
Category
Article
ISSN
0925-1030

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