Novel Molecular Resist Based on a First Generation Dendrimer Possessing Furan Rings
✍ Scribed by Hajime Mori; Eisaku Nomura; Asao Hosoda; Yasuhito Miyake; Hisaji Taniguchi
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 165 KB
- Volume
- 27
- Category
- Article
- ISSN
- 1022-1336
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✦ Synopsis
Abstract
Summary: A novel chemically amplified negative‐tone molecular resist for electron‐beam (EB) lithography was developed. The base matrix had six furan rings as a reactive functional group at its terminal. The resist containing the matrix, a crosslinker and a photoacid generator worked well as a negative‐tone resist with high sensitivity (3 µC · cm^−2^). Line and space patterns (1:2) of 200 nm could be fabricated.
SEM image of negative‐tone line and space patterns for the resist film formulated with G1‐dendrimer 5.
magnified imageSEM image of negative‐tone line and space patterns for the resist film formulated with G1‐dendrimer 5.