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Novel low-voltage BiCMOS digital circuits employing a lateral p-n-p BJT in a p-MOS structure

✍ Scribed by Rofail, S.S.; Seng, Y.K.

Book ID: 114447509
Publisher: The Institution of Electrical Engineers
Year: 1996
Tongue: English
Weight: 899 KB
Volume: 143
Category: Article
ISSN: 1350-2409
DOI: 10.1049/ip-cds:19960016

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