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Not by accident: An analytical approach to traffic crash harm reduction

โœ Scribed by Nicholas Corsaro; Daniel W. Gerard; Robin S. Engel; John E. Eck


Book ID
119292195
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
712 KB
Volume
40
Category
Article
ISSN
0047-2352

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## Abstract The effects of the barrier height reduction caused by the channel electron velocity due to the effective electron mass difference between silicon and oxide on the gate leakage current in a MOSFET are discussed The calculations show such a barrier height reduction will have a large effec