✦ LIBER ✦
Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
✍ Scribed by P.-Y. Chan; M. Gogna; E. Suarez; S. Karmakar; F. Al-Amoody; B. I. Miller; F. C. Jain
- Book ID
- 107457309
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 256 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0361-5235
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