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Nonlinear problems in quantum semiconductor modeling

✍ Scribed by Ansgar Jüngel

Book ID
104330150
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
716 KB
Volume
47
Category
Article
ISSN
0362-546X

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## Abstract Modeling and simulation of seminconductor devices requires solution of highly nonlinear equations, such as the Boltzmann transport, hydrodynamic, and drift‐diffusion equations. The conventional finite‐element method (FEM) and finite difference (FD) schemes always result in oscillatory r