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Nonlinear gain model and its application for numerical investigation of semiconductor lasers

✍ Scribed by Igor A. Sukhoivanov; Vladimir V. Lysak

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
125 KB
Volume
21
Category
Article
ISSN
0895-2477

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✦ Synopsis

The optimization of parameters and adequate methods of modeling for the creation of new types of semiconductor lasers with impro¨ed properties are required. In this work, a numerical model of gain is presented, which contains a complex description of the linear and nonlinear effects in an acti¨e layer. We show the more exact conformity of the gi¨en model to experimental data for large le¨els of light power and pumping currents. The original method of calculations of the total ( ) density states function for the quantum well QW laser is shown. The gi¨en expression has allowed us to reduce the model calculation time.

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